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Composite Transistors
XN06401 (XN6401)
Silicon PNP epitaxial planar type
Unit: mm
For general amp...
www.DataSheet4U.com
Composite
Transistors
XN06401 (XN6401)
Silicon
PNP epitaxial planar type
Unit: mm
For general amplification ■ Features
Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half
4
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
3
2
1
0.30+0.10 –0.05
■ Basic Part Number
2SB0709A (2SB709A) × 2
0.50+0.10 –0.05 10˚
1.1+0.2 –0.1
(0.65)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 300 150 −55 to +150 Unit V V V mA mA mW °C °C
Tr2 3
1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ : SC-74
0 to 0.1
Marking Symbol: 5O Internal Connection
4 5 6
1.1+0.3 –0.1
4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package
Tr1
2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO...