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XN06501 Dataheets PDF



Part Number XN06501
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planar type
Datasheet XN06501 DatasheetXN06501 Datasheet (PDF)

www.DataSheet4U.com Composite Transistors XN06501 (XN6501) Silicon NPN epitaxial planar type Unit: mm For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number • 2SD0601A (2SD601A) × 2 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 0.65±0.15 ■ Absolute Maximum Ratings Ta = 25°C P.

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www.DataSheet4U.com Composite Transistors XN06501 (XN6501) Silicon NPN epitaxial planar type Unit: mm For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number • 2SD0601A (2SD601A) × 2 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 0.65±0.15 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 7 100 200 300 150 −55 to +150 Unit V V V mA mA mW °C °C Tr2 3 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: 5N Internal Connection 4 5 6 1.1+0.3 –0.1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/ Large) Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = −2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 60 50 7 Typ Max Unit V V V µA µA   0.1 100 160 0.50 0.99 0.1 150 3.5 0.3 460 VCE(sat) fT Cob MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: August 2003 SJJ00108BED 0.4±0.2 5˚ V 1 XN06501 PT  Ta 500 60 IC  VCE 240 Ta = 25°C IB = 160 µA IC  I B VCE = 10 V Ta = 25°C 200 140 µA Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400 50 40 120 µA 100 µA 160 300 30 80 µA 20 60 µA 40 µA 10 20 µA 120 200 80 100 40 0 0 40 80 120 160 0 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA) IB  VBE 1.2 VCE = 10 V Ta = 25°C 1.0 240 IC  VBE VCE = 10 V VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 102 IC / IB = 10 200 Collector current IC (mA) Base current IB (mA) 10 0.8 160 25°C Ta = 75°C −25°C 0.6 120 1 0.4 80 10−1 25°C −25°C Ta = 75°C 0.2 40 0 0 0.2 0.4 0.6 0.8 1.0 0 10−2 0 0.4 0.8 1.2 1.6 2.0 10−1 1 10 102 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA) hFE  IC 600 VCE = 10 V 300 fT  I E VCB = 10 V Ta = 25°C NV  IC 240 VCE = 10 V GV = 80 dB Function = FLAT 200 Ta = 25°C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 240 400 Ta = 75°C 25°C Noise voltage NV (mV) 160 Rg = 100 kΩ 180 300 −25°C 120 120 200 80 22 kΩ 4.7 kΩ 100 60 40 0 10−1 1 10 102 0 −10−1 –1 –10 –102 0 10 102 103 Collector current IC (mA) Emitter current IE (mA) Collector current IC (µA) 2 SJJ00108BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of.


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