LX5512E

www.DataSheet4U.com LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~50mA Power Gain ~34dB @ 2.45GHz and Pout = 19dBm Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) APPLICATIONS The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA. For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications. WWW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ƒ IEEE 802.11b/g PRODUCT HIGHLIGHT LX5512E ...