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Switching Diodes. BAS101S Datasheet

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Switching Diodes. BAS101S Datasheet






BAS101S Diodes. Datasheet pdf. Equivalent




BAS101S Diodes. Datasheet pdf. Equivalent





Part

BAS101S

Description

High Voltage Switching Diodes



Feature


BAS101; BAS101S High-voltage switching d iodes Rev. 02 — 14 December 2009 Pro duct data sheet 1. Product profile 1. 1 General description High-voltage swit ching diodes, encapsulated in a SOT23 s mall Surface-Mounted Device (SMD) plast ic package. Table 1. Product overview Type number Package NXP BAS101 SOT 23 BAS101S SOT23 JEITA - Configurat ion single dual seri.
Manufacture

NXP

Datasheet
Download BAS101S Datasheet


NXP BAS101S

BAS101S; es 1.2 Features „ High switching speed : trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRR M ≤ 300 V 1.3 Applications „ High-sp eed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Re verse voltage: VR ≤ 300 V „ Small SM D plastic package „ Voltage clamping Reverse polarity protection 1.4 Quic k reference data Table 2. Quick ref.


NXP BAS101S

erence data Symbol Parameter Per diode I F forward current IR reverse current VR reverse voltage trr reverse recovery t ime Conditions Min Typ VR = 250 V [ 1] - - [1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measure d at IR = 3 mA. Max 200 150 300 50 Un it mA nA V ns NXP Semiconductors BAS1 01; BAS101S High-voltage switching diod es 2. Pinning info.


NXP BAS101S

rmation Table 3. Pin BAS101 1 2 3 Pinn ing Description anode not connected cat hode BAS101S 1 2 3 anode (diode 1) ca thode (diode 2) cathode (diode 1), anod e (diode 2) Simplified outline Symbol 3 12 3 12 006aaa764 3 12 3 12 006aa a763 3. Ordering information Table 4. Ordering information Type number Pack age Name Description BAS101 - plas tic surface-mounte.

Part

BAS101S

Description

High Voltage Switching Diodes



Feature


BAS101; BAS101S High-voltage switching d iodes Rev. 02 — 14 December 2009 Pro duct data sheet 1. Product profile 1. 1 General description High-voltage swit ching diodes, encapsulated in a SOT23 s mall Surface-Mounted Device (SMD) plast ic package. Table 1. Product overview Type number Package NXP BAS101 SOT 23 BAS101S SOT23 JEITA - Configurat ion single dual seri.
Manufacture

NXP

Datasheet
Download BAS101S Datasheet




 BAS101S
BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
BAS101
SOT23
BAS101S
SOT23
JEITA
-
-
Configuration
single
dual series
1.2 Features
„ High switching speed: trr 50 ns
„ Low leakage current
„ Repetitive peak reverse voltage:
VRRM 300 V
1.3 Applications
„ High-speed switching
„ High-voltage switching
„ Low capacitance: Cd 2 pF
„ Reverse voltage: VR 300 V
„ Small SMD plastic package
„ Voltage clamping
„ Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
Min Typ
VR = 250 V
-
-
-
[1] -
-
-
-
-
[1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
Max
200
150
300
50
Unit
mA
nA
V
ns




 BAS101S
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
2. Pinning information
Table 3.
Pin
BAS101
1
2
3
Pinning
Description
anode
not connected
cathode
BAS101S
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
Simplified outline Symbol
3
12
3
12
006aaa764
3
12
3
12
006aaa763
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BAS101
-
plastic surface-mounted package; 3 leads
BAS101S
4. Marking
Table 5. Marking codes
Type number
BAS101
BAS101S
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
*HQ
*HR
Version
SOT23
BAS101_BAS101S_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
2 of 11




 BAS101S
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak reverse
voltage
series connection
-
-
VR reverse voltage
series connection
-
-
IF forward current
series connection
-
-
IFRM
repetitive peak forward
tp 1 ms;
current
δ ≤ 0.25
-
IFSM
Per device
non-repetitive peak forward
current
square wave;
tp 1 μs
[1] -
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 °C
[2] -
-
65
65
Max Unit
300 V
600 V
300 V
600 V
200 mA
100 mA
1A
9A
250
150
+150
+150
mW
°C
°C
°C
[1] Tj = 25 °C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max
[1] - - 500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
BAS101_BAS101S_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
3 of 11



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