BAS101S

BAS101; BAS101S High-voltage switching diodes Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP BAS101 SOT23 BAS101S SOT23 JEITA - Configuration single dual series 1.2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3 Applications „ High-speed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Reverse voltage: VR ≤ 300 V „ Small SMD plastic package „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current IR reverse current VR reverse voltage trr reverse recovery time Conditions Min Typ VR = 250 V [1] - - [1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. Max 200 150 300 50 Unit mA nA V ns NXP Semiconductors BAS101; BAS101S High-voltage switching diodes 2. Pinning information Table 3. Pin BAS101 1 2 3 Pinning Description anode not connected cathode BAS101S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) Simplified outline Symbol 3 12 3 12 006aaa764 3 12 3 12 006aaa763 3. Ordering information Table 4. Ordering information Type number Package Name Description BAS101 - plastic surface-mounted package; 3 leads ...