Document
PMP4501V; PMP4501G;
PMP4501Y
NPN/NPN matched double transistors
Rev. 04 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated internally.
Table 1. Product overview
Type number Package
NXP
PMP4501V
SOT666
PMP4501G
SOT353
PMP4501Y
SOT363
JEITA SC-88A SC-88
NPN/NPN hFE1/hFE2 PNP/PNP 0.98 complement complement
PMP4201V PMP4201G PMP4201Y
PMP5501V PMP5501G PMP5501Y
1.2 Features
I Current gain matching I Base-emitter voltage matching I Common emitter configuration for SOT353 types I Application-optimized pinout
1.3 Applications
I Current mirror I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO IC hFE
collector-emitter voltage collector current DC current gain
Conditions
open base
VCE = 5 V; IC = 2 mA
Min Typ Max Unit
- - 45 V - - 100 mA 200 290 450
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Table 2. Quick reference data …continued
Symbol Parameter
Conditions
Per device
hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching
VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 2 mA
Min [1] 0.95 [2] -
[1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value.
Typ 1 -
Max Unit 2 mV
2. Pinning information
Table 3. Pinning Pin Description SOT666; SOT363 1 base TR1 2 base TR2 3 collector TR2 4 emitter TR2 5 emitter TR1 6 collector TR1
SOT353 1 2 3 4 5
base TR1 emitter TR1, TR2 base TR2 collector TR2 collector TR1
Simplified outline Symbol
654
123 001aab555
65 TR1
4 TR2
123 006aaa548
54 123
54
TR1 TR2
123 006aaa549
3. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
PMP4501V
- plastic surface-mounted package; 6 leads
PMP4501G
SC-88A plastic surface-mounted package; 5 leads
PMP4501Y
SC-88
plastic surface-mounted package; 6 leads
Version SOT666 SOT353 SOT363
PMP4501V_G_Y_4
Product data sheet
Rev. 04 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
2 of 14
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
4. Marking
Table 5. Marking codes Type number PMP4501V PMP4501G PMP4501Y
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Marking code[1] EB R6* S8*
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO VCEO VEBO IC ICM
Ptot
collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current
total power dissipation SOT666
open emitter open base open collector
single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
-
[1][2] -
SOT353
[1] -
SOT363
[1] -
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT666
[1][2] -
SOT353
[1] -
SOT363
[1] -
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−65 −65
Max Unit
50 V 45 V 6V 100 mA 200 mA
200 mW 200 mW 200 mW
300 300 300 150 +150 +150
mW mW mW °C °C °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PMP4501V_G_Y_4
Product data sheet
Rev. 04 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
3 of 14
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max
Per transistor
Rth(j-a)
thermal resistance from in free air junction to ambient
SOT666
[1][2] - - 625
SOT353
[1] - - 625
SOT363
[1] - - 625
Per device
Rth(j-a)
thermal resistance from in free air junction to ambient
SOT666
[1][2] - - 416
SOT353
[1] - - 416
SOT363
[1] - - 416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Unit
K/W K/W K/W
K/W K/W K/W
Table 8. Characteristics Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Per transistor
ICBO
IEBO hFE VCEsat VBEsat
collector-base cut-off VCB = 30 V;
current
IE = 0 A
VCB = 30 V; IE = 0 A; Tj = 150 °C
emitter-base cut-off current
VEB = 5 V; IC = 0 A
DC current gain
VCE = 5 V; IC = 10 µA
VCE = 5 V; IC = 2 mA
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter saturation IC = 10 mA;
voltage
IB = 0.5 mA
IC = 100 mA; IB = 5 mA
Min Typ Max Unit - - 15 nA - - 5 µA
- - 100 nA
- 250 -
200 290 450
- 50 200 mV
- 200 400 mV
[1] -
760 -
mV
[1] -
910 -
mV
PMP4501V_G_Y_4
Product data sheet
Rev. 04 — 28 August 2009
© NXP B.V. 2.