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PMP4501Y Dataheets PDF



Part Number PMP4501Y
Manufacturers NXP
Logo NXP
Description NPN/NPN matched double transistors
Datasheet PMP4501Y DatasheetPMP4501Y Datasheet (PDF)

PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors Rev. 04 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated internally. Table 1. Product overview Type number Package NXP PMP4501V SOT666 PMP4501G SOT353 PMP4501Y SOT363 JEITA SC-88A SC-88 NPN/NPN hFE1/hFE2 PNP/PNP 0.98 comple.

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PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors Rev. 04 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated internally. Table 1. Product overview Type number Package NXP PMP4501V SOT666 PMP4501G SOT353 PMP4501Y SOT363 JEITA SC-88A SC-88 NPN/NPN hFE1/hFE2 PNP/PNP 0.98 complement complement PMP4201V PMP4201G PMP4201Y PMP5501V PMP5501G PMP5501Y 1.2 Features I Current gain matching I Base-emitter voltage matching I Common emitter configuration for SOT353 types I Application-optimized pinout 1.3 Applications I Current mirror I Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per transistor VCEO IC hFE collector-emitter voltage collector current DC current gain Conditions open base VCE = 5 V; IC = 2 mA Min Typ Max Unit - - 45 V - - 100 mA 200 290 450 NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Per device hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 2 mA Min [1] 0.95 [2] - [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. Typ 1 - Max Unit 2 mV 2. Pinning information Table 3. Pinning Pin Description SOT666; SOT363 1 base TR1 2 base TR2 3 collector TR2 4 emitter TR2 5 emitter TR1 6 collector TR1 SOT353 1 2 3 4 5 base TR1 emitter TR1, TR2 base TR2 collector TR2 collector TR1 Simplified outline Symbol 654 123 001aab555 65 TR1 4 TR2 123 006aaa548 54 123 54 TR1 TR2 123 006aaa549 3. Ordering information Table 4. Ordering information Type number Package Name Description PMP4501V - plastic surface-mounted package; 6 leads PMP4501G SC-88A plastic surface-mounted package; 5 leads PMP4501Y SC-88 plastic surface-mounted package; 6 leads Version SOT666 SOT353 SOT363 PMP4501V_G_Y_4 Product data sheet Rev. 04 — 28 August 2009 © NXP B.V. 2009. All rights reserved. 2 of 14 NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors 4. Marking Table 5. Marking codes Type number PMP4501V PMP4501G PMP4501Y [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[1] EB R6* S8* Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per transistor VCBO VCEO VEBO IC ICM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation SOT666 open emitter open base open collector single pulse; tp ≤ 1 ms Tamb ≤ 25 °C - [1][2] - SOT353 [1] - SOT363 [1] - Per device Ptot total power dissipation Tamb ≤ 25 °C SOT666 [1][2] - SOT353 [1] - SOT363 [1] - Tj Tamb Tstg junction temperature ambient temperature storage temperature −65 −65 Max Unit 50 V 45 V 6V 100 mA 200 mA 200 mW 200 mW 200 mW 300 300 300 150 +150 +150 mW mW mW °C °C °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PMP4501V_G_Y_4 Product data sheet Rev. 04 — 28 August 2009 © NXP B.V. 2009. All rights reserved. 3 of 14 NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Per transistor Rth(j-a) thermal resistance from in free air junction to ambient SOT666 [1][2] - - 625 SOT353 [1] - - 625 SOT363 [1] - - 625 Per device Rth(j-a) thermal resistance from in free air junction to ambient SOT666 [1][2] - - 416 SOT353 [1] - - 416 SOT363 [1] - - 416 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Unit K/W K/W K/W K/W K/W K/W Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Per transistor ICBO IEBO hFE VCEsat VBEsat collector-base cut-off VCB = 30 V; current IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C emitter-base cut-off current VEB = 5 V; IC = 0 A DC current gain VCE = 5 V; IC = 10 µA VCE = 5 V; IC = 2 mA collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA base-emitter saturation IC = 10 mA; voltage IB = 0.5 mA IC = 100 mA; IB = 5 mA Min Typ Max Unit - - 15 nA - - 5 µA - - 100 nA - 250 - 200 290 450 - 50 200 mV - 200 400 mV [1] - 760 - mV [1] - 910 - mV PMP4501V_G_Y_4 Product data sheet Rev. 04 — 28 August 2009 © NXP B.V. 2.


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