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STC04IE170HV Dataheets PDF



Part Number STC04IE170HV
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Emitter Switched Bipolar Transistor
Datasheet STC04IE170HV DatasheetSTC04IE170HV Datasheet (PDF)

STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω Features VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω ■ High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time Application ■ Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the.

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STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω Features VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω ■ High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time Application ■ Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. 1 234 TO247-4L HV Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking STC04IE170HV C04IE170HV Package TO247-4L HV June 2009 Doc ID 12676 Rev 3 Packing Tube 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCS(SS) Collector-source voltage (VBS = VGS = 0) VBS(OS) Base-source voltage (IC = 0, VGS = 0) VSB(OS) Source-base voltage (IC = 0, VGS = 0) VGS Gate-source voltage IC Collector current ICM Collector peak current (tP < 5 ms) IB Base current IBM Base peak current (tP < 1 ms) Ptot Total dissipation at Tc ≤ 25 °C Tstg Storage temperature TJ Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case STC04IE170HV Value 1700 30 17 ± 17 4 8 4 8 178 -40 to 150 150 Unit V V V V A A A A W °C °C Value 0.7 Unit °C/W 2/9 Doc ID 12676 Rev 3 STC04IE170HV 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICS(SS) IBS(OS) ISB(OS) IGS(OS) VCS(ON) hFE (1) VBS(ON) VGS(th) Ciss QGS(tot) ts tf ts tf VCS(dyn) VCS(dyn) VCSW Collector cut-off current (VBS = VGS = 0) VCS = 1700 V Base cut-off current (IC =0, VGS = 0) VBS = 30 V Source cut-off current (IC = 0, VGS = 0) VSB = 17 V Gate-source leakage current (VBS = 0) VGS = ± 17 V Collector-source ON voltage VGS = 10 V IC = 4 A IB = 0.8 A VGS = 10 V IC = 1.5 A IB = 0.15 A DC current gain VCS = 1 V VGS = 10 V IC = 4 A VCS = 1 V VGS = 10 V IC = 1.5 A 4 7 Base-source ON voltage VGS = 10 V IC = 4 A IB = 0.8 A VGS = 10 V IC = 1.5 A IB = 0.15 A Gate threshold voltage VBS = VGS IB = 250 µA 2 Input capacitance (VGS = VCB = 0) VCS = 25 V f = 1 MHz Gate-source charge (VCB = 0) VGS = 10 V Inductive load Storage time Fall time VGS = 10 V VClamp = 1360 V IC = 2 A RG = 47 Ω tp = 4 µs IB = 0.4 A Inductive load Storage time Fall time VGS =10 V VClamp = 1360 V IC = 2 A RG = 47 Ω tp = 4 µs IB = 0.2 A Collector-source dynamic voltage (0.5 µs) VCC = VClamp = 400 V VGS = 10 V IC = 1.5 A IB = 0.3 A tpeak = 500 ns RG = 47 Ω IBpeak = 3 A (2IC ) Collector-source dynamic voltage (1 µs) VCC = VClamp = 400 V VGS = 10 V IC = 1.5 A IB = 0.3 A tpeak = 500 ns RG = 47 Ω IBpeak = 3 A (2IC ) Maximum collectorsource voltage at turnoff without snubber RG = 47 Ω hFE = 5 IC = 4 A 1700 0.7 0.6 5.5 11 1.3 0.9 3 510 3.9 770 10 410 10 5.36 4.32 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%. 100 10 100 100 1.5 1.4 1.5 1.1 4 µA µA µA nA V V V V V pF nC ns ns ns ns V V V Doc ID 12676 Rev 3 3/9 Electrical characteristics STC04IE170HV 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Collector-source dynamic voltage Figure 4. DC current gain Figure 5. Gate threshold voltage vs. temperature Figure 6. Collector-source ON voltage Figure 7. Collector-source ON voltage (hFE = 5) (hFE = 10) 4/9 Doc ID 12676 Rev 3 STC04IE170HV Figure 8. Base-source ON voltage (hFE = 5) Electrical characteristics Figure 9. Base-source ON voltage (hFE = 10) Figure 10. Inductive load switching time Figure 11. Inductive load switching time (hFE = 5) (hFE = 10) Figure 12. Reverse biased safe operating area Doc ID 12676 Rev 3 5/9 Package mechanical data 3 Package mechanical data STC04IE170HV In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6/9 Doc ID 12676 Rev 3 STC04IE170HV DIM. A A1 A2 b b1 b2 c D D1 E e e1 L L1 L2 L3 øP S Package mechanical data TO247-4L HV mechanical data MIN. 4.85 2.20 0.95 1.10 2.50 0.40 23.85 15.45 10.20 2.20 3.55 mm. TYP 2.50 1.27 1.10 24 21.50 15.60 2.54 5.08 2.50 18.50 3 5.50 MAX. 5.15 2.60 1.30 1.50 2.90 0.80 24.15 15.75 10.80 2.80 3.65 Doc ID 12676 Rev 3 7734874_A 7/9 Revision history 4 Revision history STC04IE170HV Table 5. Document revision history Date Revision Changes 11-Sep-2006 21-Nov-2006 1 First release. 2 Improved application target. 16-Jun-2009 3 Updated Figure 2 on page 4 and mechanical data. 8/9 Doc ID 12676 Rev 3 STC04IE170HV Please Read C.


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