APT19F100J

www.DataSheet4U.com APT19F100J 1000V, 19A, 0.46Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. S G D S SO 2 T- 27 ISOTOP ® "UL Recognized" file # E145592 APT19F100J G D Single die FREDFET S FEATURES Fast switching with low EMI Low trr for high reliability Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full full bridge Half bridge PFC and other boost converter Buck converter Single and two switch forward Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 19 12 120 ±30 1875 16 Unit A V mJ A Thermal and Me...