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TC1413 Dataheets PDF



Part Number TC1413
Manufacturers Microchip Technology
Logo Microchip Technology
Description 3A High-Speed MOSFET Drivers
Datasheet TC1413 DatasheetTC1413 Datasheet (PDF)

TC1413/TC1413N 3A High-Speed MOSFET Drivers Features • Latch-Up Protected: Withstands 500 mA Reverse Current • Input Withstands Negative Inputs Up to 5V • Electrostatic Discharge (ESD) Protected: 2.0 kV (HBM) and 400V (MM) • High Peak Output Current: 3A • Wide Input Supply Voltage Operating Range: - 4.5V to 16V • High Capacitive Load Drive Capability: - 1800 pF in 20 ns • Short Delay Time: 35 ns typical • Matched Delay Times • Low Supply Current - With Logic ‘1’ Input: 500 µA - With Logic ‘0’ I.

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TC1413/TC1413N 3A High-Speed MOSFET Drivers Features • Latch-Up Protected: Withstands 500 mA Reverse Current • Input Withstands Negative Inputs Up to 5V • Electrostatic Discharge (ESD) Protected: 2.0 kV (HBM) and 400V (MM) • High Peak Output Current: 3A • Wide Input Supply Voltage Operating Range: - 4.5V to 16V • High Capacitive Load Drive Capability: - 1800 pF in 20 ns • Short Delay Time: 35 ns typical • Matched Delay Times • Low Supply Current - With Logic ‘1’ Input: 500 µA - With Logic ‘0’ Input: 100 µA • Low Output Impedance: 2.7 • Available in Space-Saving 8-pin MSOP Package • Pinout - same as TC1410/TC1411/TC1412 Applications • Switch Mode Power Supplies • Line Drivers • Pulse Transformer Drive • Relay Driver General Description The TC1413/TC1413N are 3A CMOS buffers/drivers. They do not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against electrostatic discharge (ESD) up to 2.0 kV (HBM) and 400V (MM). As MOSFET drivers, the TC1413/TC1413N can easily charge a 1800 pF gate capacitance in 20 ns with matched rise and fall times. To ensure the MOSFET’s intended state will not be affected even by large transients, low enough impedance in both the ‘On’ and ‘Off’ states are provided. The leading and trailing edge propagation delay times are also matched to allow driving short-duration inputs with greater accuracy. Package Type 8-Pin MSOP/PDIP/SOIC VDD 1 IN 2 TC1413 NC 3 GND 4 8 VDD 7 OUT 6 OUT 5 GND VDD 1 8 VDD IN NC 2 3 TC1413N 7 6 OUT OUT GND 4 5 GND 2 6,7 2 6,7 Inverting Non-Inverting NC = No Internal Connection Note: For proper operation, duplicate pins must be connected together.  2001-2015 Microchip Technology Inc. DS20001392E-page 1 TC1413/TC1413N Functional Block Diagram 300 mV TC1413 Inverting Outputs Input Effective Input C = 10 pF GND 4.7V Non-Inverting Outputs TC1413N VDD Output DS20001392E-page 2  2001-2015 Microchip Technology Inc. TC1413/TC1413N 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Supply Voltage ..................................................... +20V Input Voltage ...................... VDD + 0.3V to GND – 5.0V Power Dissipation (TA  70°C) MSOP .......................................................... 340 mW PDIP ............................................................ 730 mW SOIC............................................................ 470 mW Storage Temperature Range.............. -65°C to +150°C Maximum Junction Temperature ...................... +150ºC † Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V  VDD  16V. Parameters Sym. Min. Typ. Max. Units Conditions Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Output VIH VIL IIN 2.0 — -1.0 -10 ——V — 0.8 V — 1.0 µA 0V  VIN  VDD, TA = +25°C — 10 -40°C  TA  +85°C High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) VOH VDD – 0.025 — — VOL — — 0.025 RO — 2.7 4.0 IPK IREV — — — — 3.3 5.0 3.3 5.0 3.0 — 0.5 — V DC Test V DC Test  VDD = 16V, IO = 10 mA, TA = +25°C 0°C  TA  +70°C -40°C  TA  +85°C A VDD = 16V A Duty cycle  2%, t  300 µs, VDD = 16V Rise Time Fall Time Delay Time Delay Time Power Supply tR — 20 28 ns TA = +25°C — 22 33 0°C  TA  +70°C — 24 33 -40°C  TA  +85°C, Figure 4-1 tF — 20 28 ns TA = +25°C — 22 33 0°C  TA  +70°C — 24 33 -40°C  TA  +85°C, Figure 4-1 tD1 — 35 45 ns TA = +25°C, — 40 50 0°C  TA  +70°C — 40 50 -40°C  TA  +85°C, Figure 4-1 tD2 — 35 45 ns TA = +25°C — 40 50 0°C  TA  +70°C — 40 50 -40°C  TA  +85°C, Figure 4-1 Power Supply Current IS — — Note 1: Switching times ensured by design. 0.5 1.0 mA VIN = 3V, VDD = 16V 0.1 0.15 VIN = 0V  2001-2015 Microchip Technology Inc. DS20001392E-page 3 TC1413/TC1413N TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Specified Temperature Range (C) Specified Temperature Range (E) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-MSOP Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC .


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