FDB8860

FDB8860 N-Channel Logic Level PowerTrench® MOSFET FDB8860 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6mΩ Features „ RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A „ Qg(5) = 89nC (Typ), VGS = 5V „ Low Miller Charge „ Low QRR Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant Applications „ DC-DC Converters December 2010 FDB8860 Rev A2 ©2010 Fairchild Semiconductor Corporation 1 FDB8860 Rev.A2 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V, TC < 163oC) Continuous (VGS = 5V, TC < 162oC) Continuous (VGS = 10V, TC = 25oC, with RθJA = 43oC/W) Pulsed EAS SinglePulseAvalancheEnergy (Note1) Power Dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 80 80 31 Figure 4 947 254 1.7 -55 to +175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 0.59 62 43 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8860 Device FDB8860 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteri...