Document
FDD8444 N-Channel PowerTrench® MOSFET
MPLEMENTATION
March 2015
FDD8444
N-Channel PowerTrench® MOSFET
40V, 50A, 5.2mΩ
Features
Typ rDS(on) = 4mΩ at VGS = 10V, ID = 50A Typ Qg(10) = 89nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems
AD FREE I
LE
©2006 Fairchild Semiconductor Corporation
1
FDD8444 Rev. 1.
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FDD8444 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10V) Continuous (VGS = 10V, with RθJA = 52oC/W) Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1) (Note 2)
Ratings 40 ±20 145 20
Figure 4 535 153 1.02
-55 to +175
Units V V
A
mJ W W/oC oC
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area
0.98 52
oC/W oC/W
Package Marking and Ordering Information
Device Marking FDD8444
Device FDD8444
Package TO-252AA
Reel Size 13”
Electrical Characteristics TJ = 25°C unless otherwise noted
Tape Width 16mm
Symbol
Parameter
Test Conditions
Min Typ
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V
40
-
IDSS
Zero Gate Voltage Drain Current
VDS = 32V VGS = 0V
-
-
TJ = 150oC
-
-
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
On Characteristics
Quantity 2500 units
Max Units
-
V
1 μA
250
±100 nA
VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA ID = 50A, VGS= 10V ID = 50A, VGS= 10V, TJ = 175oC
2
2.5
4
V
-
4
5.2
mΩ
-
7.2
9.4
Ciss Coss Crss RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V, f = 1MHz
f = 1MHz
VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 2V
VDD = 20V ID = 50A Ig = 1.0mA
-
6195
-
pF
-
585
-
pF
-
332
-
pF
-
1.9
-
Ω
-
89
116
nC
43
56
nC
-
11 14.3 nC
-
23
-
nC
-
11
-
nC
-
20
-
nC
FDD8444 Rev. 1.
2
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FDD8444 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics
ton td(on) tr td(off) tf toff
Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time
VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.67mH, IAS = 40A
ISD = 50A ISD = 25A
IF = 50A, dIF/dt = 100A/μs
Min Typ Max Units
-
-
135
ns
-
12
-
ns
-
78
-
ns
-
48
-
ns
-
15
-
ns
-
-
95
ns
-
0.9 1.25
V
-
0.8
1.0
-
39
51
ns
-
45
59
nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
FDD8444 Rev. 1.
3
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FDD8444 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.2
POWER DISSIPATION MULIPLIER
1.0
0.8
0.6
0.4
0.2
0.0 0
25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case Temperature
2 DUTY CYCLE - DESCENDING ORDER
1
ID, DRAIN CURRENT (A)
160 140 120 100
80 60 40 20
0 25
CURRENT LIMITED BY PACKAGE
VGS = 10V
50
75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs Case Temperature
NORMALIZED THERMAL IMPEDANCE, ZθJC
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
t1 t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000 1000
VGS = 10V
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC 150
IDM, PEAK CURRENT (A)
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD8444 Rev. 1.
4
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FDD8.