N-Channel PowerTrench. FDD8447L Datasheet

FDD8447L Datasheet PDF, Equivalent


Part Number

FDD8447L

Description

N-Channel PowerTrench

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDD8447L Datasheet PDF


FDD8447L Datasheet
May 2008
FDD8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5m
Features
General Description
„ Max rDS(on) = 8.5mat VGS = 10V, ID = 14A
„ Max rDS(on) = 11.0mat VGS = 4.5V, ID = 11A
„ Fast Switching
„ RoHS Compliant
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
Applications
„ Inverter
„ Power Supplies
D
D
G
S
DT O- P-2A5K2
(T O -25 2)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC= 25°C
TC= 25°C
TA= 25°C
IS
EAS
PD
TJ, TSTG
Max Pulse Diode Current
Drain-Source Avalanche Energy
Power Dissipation
TC= 25°C
TA= 25°C
TA= 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
G
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
S
Ratings
40
±20
50
57
15.2
100
100
153
44
3.1
1.3
-55 to +150
Units
V
V
A
A
mJ
W
°C
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
2.8
40
96
°C/W
Device Marking
FDD8447L
Device
FDD8447L
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
1
www.fairchildsemi.com

FDD8447L Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
V
ID = 250µA, referenced to 25°C
35 mV/°C
VDS = 32V, VGS = 0V
VGS = ±20V, VGS = 0V
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 14A, TJ=125°C
VDS = 5V, ID = 14A
1.0
1.9 3.0
V
-5 mV/°C
7.0
8.5
10.4
58
8.5
11.0
14.0
m
S
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
1970
250
150
1.27
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge, VGS = 10V
Total Gate Charge, VGS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6
VDD = 20V, ID = 14A
VGS = 10V
12 21 ns
12 21 ns
38 61 ns
9 18 ns
37 52 nC
20 28 nC
6 nC
7 nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
(Note 1a)
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 14A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14A, di/dt = 100A/µs
2.6
0.8 1.2
22
11
A
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while R--θ--J--A---i-s---d--etermined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25oC, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
4
FDD8447L Rev.C3
2 www.fairchildsemi.com


Features Datasheet pdf FDD8447L 40V N-Channel PowerTrench® MOS FET May 2008 FDD8447L 40V N-Channel P owerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description „ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14 A „ Max rDS(on) = 11.0mΩ at VGS = 4. 5V, ID = 11A „ Fast Switching „ RoHS Compliant This N-Channel MOSFET has be en produced using Fairchild Semiconduct or’s proprietary PowerTrench® techno logy to deliver low rDS(on) and optimiz ed BVDSS capability to offer superior p erformance benefit in the application. Applications „ Inverter „ Power Supp lies D D G S DT O- P-2A5K2 (T O -25 2) MOSFET Maximum Ratings TC = 25°C u nless otherwise noted Symbol VDS VGS I D Parameter Drain to Source Voltage Ga te to Source Voltage Drain Current -Con tinuous (Package limited) -Continuous ( Silicon limited) -Continuous -Pulsed T C= 25°C TC= 25°C TA= 25°C IS EAS PD TJ, TSTG Max Pulse Diode Current Dra in-Source Avalanche Energy Power Dissi pation TC= 25°C TA= 25°C TA= 25°C Operating and Storage Junction Temperature Ran.
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