FDD8451

FDD8451 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8451 N-Channel PowerTrench® MOSFET 40V, 28A, 24m: Features General Description „ Max rDS(on) 24m: at VGS = 10V, ID = 9A „ Max rDS(on) 30m: at VGS = 4.5V, ID = 7A „ Low gate charge „ Fast Switching „ High performance trench technology for extremely low rDS(on) „ RoHS compliant AD FREE I This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Application „ DC/DC converter „ Backlight inverter LE D G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous@TC=25°C ID -Continuous @TA=25°C -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1a) (Note 3) RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient RTJA Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) Device Marking FDD8451 Device FDD8451 Package D-PAK(TO-252) Reel Size 13’’ S Ratings 40 ±20 28 9 78 20 30 -55 to 150 Units V V A mJ W °C 4.1 °C/W 40 °C/W 96 °C/W Tape Width 16mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation 1...