FDB8444

FDB8444 N-Channel PowerTrench® MOSFET MPLEMENTATION February 2006 FDB8444 N-Channel PowerTrench® MOSFET 40V, 70A, 5.5mΩ Features „ Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A „ Typ Qg(TOT) = 91nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Transmission „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems AD FREE I LE GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) D G S ©2006 Fairchild Semiconductor Corporation 1 FDB8444 Rev A2 (W) www.fairchildsemi.com FDB8444 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed (Note 1) EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Derate above 25oC Operating and Storage Temperature (Note 2) Ratings 40 ± 20 70 Figure 4 307 167 1.1 -55 to +175 Units V V A mJ W W/oC oC Thermal Characteristics RθJC Thermal Resistance, Junction to Case 0.9 RθJA Thermal Resistance, Junction to Ambient TO-263, lin2 copper pad area 43 oC/W oC/W Package Marking and Ordering Information Device Marking FDB8444 Device FDB8444 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unl...