N-Channel MOSFET
FDB8445 N-Channel PowerTrench® MOSFET
MPLEMENTATION
January 2006
FDB8445
N-Channel PowerTrench® MOSFET
40V, 70A, 9mΩ
...
Description
FDB8445 N-Channel PowerTrench® MOSFET
MPLEMENTATION
January 2006
FDB8445
N-Channel PowerTrench® MOSFET
40V, 70A, 9mΩ
Features
Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A Typ Qg(10) = 44nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems
AD FREE I
LE
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN (FLANGE)
D
G S
©2006 Fairchild Semiconductor Corporation
1
FDB8445 Rev A1 (W)
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V)
Pulsed
(Note 1)
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
(Note 2)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-263, 1in2 copper pad area
Ratings 40 ±20 70
Figure 4 102 92 0.6
-55 to +175
1.63
43
Units V V A
mJ W W/oC oC
oC/W oC/W
Package Marking and Ordering Information
Device Marking FDB8445
Device FDB8445
Package TO-263AB
Reel Size 330mm
Tape Width 24mm
Quantity 800 units
Electrical Characteristics TJ = 25°C unless otherw...
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