Document
Ordering number : ENN7500
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
2SJ650
P-Channl Silicon MOSFET
2SJ650
DC / DC Converter Applications
Package Dimensions
unit : mm 2063A
10.0 3.2
[2SJ650] 4.5
2.8
3.5 7.2 16.0
18.1 5.6
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6 1.2
0.75
123
2.55
2.55
2.55
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings
Unit
--60
V
±20
V
--12
A
--48
A
2.0
W
20
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : J650
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--6A
min --60
--1.2 7
Ratings
Unit
typ
max
V
--1 µA
±10 µA
--2.6
V
10
S
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51903 TS IM TA-100560 No.7500-1/4
2SJ650
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain“Miller”Charge Diode Forward Voltage
Symbol
RDS(on)1 RDS(on)2
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd VSD
Conditions
ID=--6A, VGS=--10V ID=--6A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--12A VDS=--30V, VGS=--10V, ID=--12A VDS=--30V, VGS=--10V, ID=--12A IS=--12A, VGS=0
Switching Time Test Circuit
VIN 0V --10V
VIN
PW=10µs D.C.≤1%
G
VDD= --30V
ID= --6A RL=5Ω
D
VOUT
2SJ650
P.G
50Ω
S
Ratin.