DatasheetsPDF.com

2SJ650 Dataheets PDF



Part Number 2SJ650
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channl Silicon MOSFET
Datasheet 2SJ650 Datasheet2SJ650 Datasheet (PDF)

Ordering number : ENN7500 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drai.

  2SJ650   2SJ650



Document
Ordering number : ENN7500 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings Unit --60 V ±20 V --12 A --48 A 2.0 W 20 W 150 °C --55 to +150 °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : J650 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--6A min --60 --1.2 7 Ratings Unit typ max V --1 µA ±10 µA --2.6 V 10 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51903 TS IM TA-100560 No.7500-1/4 2SJ650 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain“Miller”Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--6A, VGS=--10V ID=--6A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--12A VDS=--30V, VGS=--10V, ID=--12A VDS=--30V, VGS=--10V, ID=--12A IS=--12A, VGS=0 Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% G VDD= --30V ID= --6A RL=5Ω D VOUT 2SJ650 P.G 50Ω S Ratin.


MCF5373 2SJ650 2SJ651


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)