2SJ650 Applications Datasheet

2SJ650 Datasheet PDF, Equivalent


Part Number

2SJ650

Description

DC / DC Converter Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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Download 2SJ650 Datasheet PDF


2SJ650
www.DataSheet4U.com
Ordering number : ENN7500
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SJ650
P-Channl Silicon MOSFET
2SJ650
DC / DC Converter Applications
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ650]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--12
--48
2.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J650
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
min
--60
--1.2
7
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
10 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51903 TS IM TA-100560 No.7500-1/4

2SJ650
2SJ650
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--6A, VGS=--10V
ID=--6A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
IS=--12A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --6A
RL=5
D VOUT
2SJ650
P.G 50S
Ratings
min typ max
Unit
100 135 m
145 205 m
1020
pF
110 pF
76 pF
10 ns
145 ns
85 ns
96 ns
21 nC
3.8 nC
4.5 nC
--0.9 --1.2 V
ID -- VDS
--25
Tc=25°C
--20 --8V
--6V
--15
--4V
--10
--5
VGS= --3V
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06157
--25
VDS= --10V
--20
ID -- VGS
--15
--10
--5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06158
No.7500-2/4


Features www.DataSheet4U.com Ordering number : E NN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features • • • Package Dimension s unit : mm 2063A [2SJ650] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-spee d switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.5 5 2.4 2.4 0.7 2.55 Specifications Ab solute Maximum Ratings at Ta=25°C Para meter Drain-to-Source Voltage Gate-to-S ource Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipa tion Channel Temperature Storage Temper ature Symbol VDSS VGSS ID IDP PD Tch Ts tg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Sou rce SANYO : TO-220ML Ratings --60 ±20 --12 --48 2.0 20 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electr ical Characteristics at Ta=25°C Parame ter Drain-to-Source Breakdown Voltage Z ero-Gate Voltage Drain Current Gate-to- Source Leakage Current Cutoff Voltage F orward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions I.
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