2SJ651 TRASISTOR Datasheet

2SJ651 Datasheet PDF, Equivalent


Part Number

2SJ651

Description

P CHANNEL SILICON TRASISTOR

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SJ651 Datasheet


2SJ651
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Ordering number : ENN7501
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SJ651
P-Channl Silicon MOSFET
2SJ651
DC / DC Converter Applications
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ651]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--20
--80
2.0
25
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J651
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--10A
min
--60
--1.2
11
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
17 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100559 No.7501-1/4

2SJ651
2SJ651
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--10A, VGS=--10V
ID=--10A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--20A
VDS=--30V, VGS=--10V, ID=--20A
VDS=--30V, VGS=--10V, ID=--20A
IS=--20A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --10A
RL=3
D VOUT
2SJ651
P.G 50S
Ratings
min typ max
Unit
45 60 m
65 92 m
2200
pF
220 pF
165 pF
18 ns
115 ns
190 ns
120 ns
45 nC
7.4 nC
9 nC
--0.95
--1.2 V
ID -- VDS
--50
Tc=25°C
--45
--40 --6V
--35 --4V
--30
--25
--20
--15
--10
--5
0
0
VGS= --3V
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06170
--45
VDS= --10V
--40
ID -- VGS
--35
--30
--25
--20
--15
--10
--5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06171
No.7501-2/4


Features www.DataSheet4U.com Ordering number : E NN7501 2SJ651 P-Channl Silicon MOSFET 2SJ651 DC / DC Converter Applications Features • • • Package Dimension s unit : mm 2063A [2SJ651] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-spee d switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.5 5 2.4 2.4 0.7 2.55 Specifications Ab solute Maximum Ratings at Ta=25°C Para meter Drain-to-Source Voltage Gate-to-S ource Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipa tion Channel Temperature Storage Temper ature Symbol VDSS VGSS ID IDP PD Tch Ts tg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Sou rce SANYO : TO-220ML Ratings --60 ±20 --20 --80 2.0 25 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electr ical Characteristics at Ta=25°C Parame ter Drain-to-Source Breakdown Voltage Z ero-Gate Voltage Drain Current Gate-to- Source Leakage Current Cutoff Voltage F orward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions I.
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