2SJ653 Applications Datasheet

2SJ653 Datasheet PDF, Equivalent


Part Number

2SJ653

Description

General-Purpose Switching Device Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
PDF Download
Download 2SJ653 Datasheet PDF


2SJ653
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Ordering number : ENN7626
2SJ653
P-Channl Silicon MOSFET
2SJ653
General-Purpose Switching Device Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ653]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--37
--148
2.0
35
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J653
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--19A
min
--60
--1.2
26.5
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
38 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72503 TS IM TA-4246 No.7626-1/4

2SJ653
2SJ653
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--19A, VGS=--10V
ID=--19A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--37A
VDS=--30V, VGS=--10V, ID=--37A
VDS=--30V, VGS=--10V, ID=--37A
IS=--37A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --19A
RL=1.58
D VOUT
2SJ653
P.G 50S
Ratings
min typ max
Unit
19 25 m
26 37 m
6500
pF
700 pF
500 pF
53 ns
245 ns
495 ns
255 ns
120 nC
22 nC
22 nC
--0.99
--1.2 V
ID -- VDS
--70
Tc=25°C
--4V
--60
--50
--40
--30
--20 VGS= --3V
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06546
--70
VDS= --10V
--60
ID -- VGS
--50
--40
--30
--20
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06547
No.7626-2/4


Features www.DataSheet4U.com Ordering number : E NN7626 2SJ653 P-Channl Silicon MOSFET 2SJ653 General-Purpose Switching Devic e Applications Features • • • • Package Dimensions unit : mm 2063A [2 SJ653] 10.0 3.2 3.5 7.2 Low ON-resista nce. Ultrahigh-speed switching. 4V driv e. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0. 75 2.4 0.7 2.55 1 2 3 2.55 2.4 Spec ifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Volt age Gate-to-Source Voltage Drain Curren t (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature S torage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle 1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratin gs --60 ±20 --37 --148 2.0 35 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electrical Characteristics at T a=25°C Parameter Drain-to-Source Break down Voltage Zero-Gate Voltage Drain Cu rrent Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Sy.
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