N-Channel UltraFET Trench MOSFET
www.DataSheet4U.com
FDMC2674 N-Channel UltraFET Trench® MOSFET
May 2006
FDMC2674 N-Channel UltraFET Trench® MOSFET
22...
Description
www.DataSheet4U.com
FDMC2674 N-Channel UltraFET Trench® MOSFET
May 2006
FDMC2674 N-Channel UltraFET Trench® MOSFET
220V, 1A, 366mΩ Features General Description
Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) RoHS Compliant
tm
UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures
Bottom
5 6 7 8 D 1 D D D
Top
5 6
S G
4 3 2 1
4
3
2
7 8
S
S
MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Operating and Storage Temperature
Ratings 220 ±20 1 13.8 (Note 3) 13 2.4 -55 to 150
Units V V A mJ W °C
Thermal Characteristics
RθJA RθJA Thermal Resistance , Junction to Ambient Thermal Resistance , Junction to Ambient (Note 1a) (Note 1b) 52 108 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDMC2674 Device FDMC2674 Package MLP 3.3 x 3.3
1
Reel Size 7’’
Tape Width 12mm
Quantity 3000 units
www.fairchildsemi.com
©2006...
Similar Datasheet