Specified PowerTrench. FDMC3300NZA Datasheet

FDMC3300NZA Datasheet PDF, Equivalent


Part Number

FDMC3300NZA

Description

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC3300NZA Datasheet PDF


FDMC3300NZA Datasheet
www.DataSheet4U.com
December 2005
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench®
MOSFET
8A,20V,26m
General Description
This Dual N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the RDS(on)@VGS=2.5v on special MicroFET
leadframe with all the drains on one side of the package.
Applications
AD FREE I
„ Li-lon Battery Pack
Features
„ RDS(ON) = 26m@ VGS = 4.5 V, ID = 8A
„ RDS(ON) = 34m@ VGS = 2.5 V, ID = 7A
„ >2000V ESD protection
„ Low Profile-1mm maxium-in the new package MicroFET
3.3x3.3 mm
„ Pb-free and RoHS Compliant
D 2 DD22
D1
D1
1
2
3
S2 G2
S1 G1
4
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD
TJ, TSTG
Power dissipation (Steady State)
Operating and Storage Junction Temperature Range
(Note 1a)
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
3300A
Device
FDMC3300NZA
Reel Size
7”
(Note 1a)
(Note 1b)
(Note 1)
Tape Width
12mm
©2005 Fairchild Semiconductor Corporation
FDMC3300NZA Rev B
1
8
7
6
5
Ratings
20
±12
8
40
2.4
-55 to +150
Units
V
V
A
W
oC
52
108 oC/W
5
Quantity
3000 units
www.fairchildsemi.com

FDMC3300NZA Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VGS = 0V , ID = 250µA
ID = 250µA,
Referenced to 25°C
VDS = 16V, VGS = 0V,
VGS = ±12V, VDS = 0V
20 - - V
- 12.0 - mV/°C
- - 1 µA
- - ±10 µA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250µA
ID = 250µA,
Referenced to 25°C
VGS = 4.5V, ID = 8A
VGS = 2.5V, ID = 7A
VGS = 4.5V, ID = 8A,
TJ =150°C
VDS = 5V, ID =8 A
0.6 - 1.5 V
- -3.1 - mV/°C
- 20 26
25 34 m
- 29 38
- 29 -
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10V, VGS =0V,
f = 1.0MHz
f = 1.0MHz
- 610 -
- 165 -
- 115 -
- 1.7 -
pF
pF
pF
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6
VDS = 10V, ID = 8A,
VGS = 4.5V
- 8 16 ns
- 8 16 ns
- 19 34 ns
- 9 18 ns
- 8 - nC
- 1 - nC
- 2 - nC
Drain-Source Diode Characteristics and Maximum Ratings
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2A (Note 2)
trr
Diode Reverse Recovery Time
IF= 8A,
Qrr
Diode Reverse Recovery Charge
dIF/dt=100A/µs
-
-
-
0.7 1.2
V
- 21 ns
- 6 nC
Notes:
1.wRhθiJleA
is determined with the device mounted on a 1in2
RθJA is determined by the user’s board design.
oz.copper
pad
on
a
1.5x1.5
in
board
of
FR-4
material
.RθJC
are
guaranteed
by
design
a. 52°C/W when mounted on
a 1 in2 pad of 2 oz
b. 108°C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
FDMC3300NZA RevB
2
www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDMC3300NZA Monolit hic Common Drain N-Channel 2.5V Specifi ed PowerTrench® MOSFET December 2005 FDMC3300NZA Monolithic Common Drain N- Channel 2.5V Specified PowerTrench® MO SFET 8A,20V,26mΩ General Description This Dual N-Channel MOSFET has been des igned using Fairchild Semiconductor’s advanced Power Trench process to optim ize the RDS(on)@VGS=2.5v on special Mic roFET leadframe with all the drains on one side of the package. Features „ R DS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A „ RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A „ >2000V ESD protection „ Low Pro file-1mm maxium-in the new package Micr oFET 3.3x3.3 mm „ Pb-free and RoHS Com pliant Applications „ Li-lon Battery Pack LE A REE I DF D1 D1 D2 Absol ute Maximum Ratings TA = 25°C unless o therwise noted Symbol VDSS VGSS ID PD T J, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Cont inuous -Pulsed Power dissipation (Stead y State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) Ra.
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