FDMC3300NZA

www.DataSheet4U.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET December 2005 FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 8A,20V,26mΩ General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package. Features „ RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A „ RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A „ >2000V ESD protection „ Low Profile-1mm maxium-in the new package MicroFET 3.3x3.3 mm „ Pb-free and RoHS Compliant Applications „ Li-lon Battery Pack LE A REE I DF D1 D1 D2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) Ratings 20 ±12 8 40 2.4 -55 to +150 Units V V A W oC M ENTATIO LE N MP D D2 2 1 2 3 G1 S2 G2 8 7 6 5 4 S1 Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 52 108 5 o C/W Package Marking and Ordering Information Device Marking 3300A Device FDMC3300NZA Reel Size 7” 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com ©2005 Fairchild Semiconductor ...