FGPF120N30

www.DataSheet4U.com FGPF120N30 300V, 120A PDP IGBT January 2006 FGPF120N30 300V, 120A PDP IGBT Features High Current Capability Low saturation voltage : VCE(sat) = 1.1 V @ IC = 25A High input impedance Fast switching General Description Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential. Application PDP SYSTEM C TO-220F 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES VGES IC IC_pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds FGPF120N30 300 ± 20 120 180 * 60 24 -55 to +150 -55 to +150 300 Units V V A A W W °C °C °C @ TC = 25°C @ TC = 25°C @ TC = 25°C @ TC = 100°C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes (1) Repetitive test , pulse width=100usec , Duty=0.5 * Ic_pulse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.1 62.5 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF120N30 Rev. A FGPF120N30 300V, 120A PDP IGBT Package Marking and Ordering Information Device Marking FGPF120N30 Device FGPF120N30TU P...