FGPF30N30

www.DataSheet4U.com FGPF30N30 300V, 30A PDP IGBT September 2006 FGPF30N30 300V, 30A PDP IGBT Features High Current Capability Low saturation voltage: VCE(sat) =1.4V @ IC = 20A High Input Impedance Fast switching RoHS Complaint General Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution loss is essential. Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC Description Collector-Emitter Voltage FGPF30N30 300 ± 30 80 46 18.5 -55 to +150 -55 to +150 300 Units V V A W W o C oC o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 2.7 62.5 Units o C /W o C /W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF30N30 Rev. A FGPF30N30 300V, 30A PDP IGBT Package Marking and Ordering Information Device Marking FGPF30N30 Device FGFP30N30TU Package TO-220F = 25oC unles...