FGPF7N60LSD

www.DataSheet4U.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK January 2006 FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A High input impedance CO-PAK, IGBT with FRD : trr = 50 ns (typ.) Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature. Applications Lamp applications (Hallogen Dimmer) C G TO-220F 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGPF7N60LSD 600 ± 20 14 7 21 12 60 45 18 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Thermal Characteristics Symbol RθJC (IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. ---- Max. 2.8 4.5 62.5 Uni...