IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Low VCE (ON) Trench IGBT Technology Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA Square RBSOA
G
100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra...
