IRIS-G6651

www.DataSheet4U.com Data Sheet No. PD 96949A IRIS-G6651 Features Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Low start-up circuit current (100uA max) Built-in Active Low-Pass Filter for stabilizing the operation in case of light load Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. Built-in constant voltage drive circuit Built-in soft drive circuit Built-in low frequency PRC mode (≒20kHz) Various kinds of protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) IRIS-G6651 650 3.9Ω INTEGRATED SWITCHER Package Outline TO-220 Fullpack (5 Lead) Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) 230±15% 85 to 264 Pout(W) Note 1 66 30 Descriptions Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above. IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low freq...