MA2YD33

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2YD33 Silicon epitaxial planar type For high frequency rectification  Features  Forward current (Average) IF(AV) = 500 mA rectification is possible  Small reverse current IR 1.6±0.1 1 0 to 0.1 2.6±0.1 3.5±0.1 0.80±0.05 Unit: mm  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 500 3 125 –55 to +125 Unit V V mA °C °C 1: Anode 2: Cathode 5° 2 0.55±0.1 5° 0.45±0.1 0.16+0.1 –0.06 Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Mini2-F1 Package Marking Symbol: 2V  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF1 VF2 IR Ct trr IF = 10 mA IF = 500 mA VR = 30 V VR = 0 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 IR RL = 100 Ω 60 5 Conditions Min Typ 0.3 0.5 Max 0.4 0.55 50 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit Bias Application Unit (N-50BU) tr 10% Input Pulse tp t IF Output Pulse trr t A VR Wave Form Analyzer (SAS-813...