NTMSD3P102R2

NTMSD3P102R2 FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features ăHigh Efficiency Components in a Single SO-8 Package ăHigh Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF ăIndependent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use ăLess Component Placement for Board Space Savings ăSO-8 Surface Mount Package, Mounting Information for SO-8 Package Provided ăPb-Free Packages are Available Applications ăDC-DC Converters ăLow Voltage Motor Control ăPower Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted). Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) VDSS VGS RqJA PD ID ID IDM -20 "20 V V 171 0.73 -2.34 -1.87 -8.0 °C/W W A A A Thermal Resistance - Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 100 1.25 -3.05 -2.44 -12 °C/W W A A A Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Cur...