DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor
Product data sheet Supersedes d...
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4350T 50 V; 3 A
NPN low VCEsat (BISS)
transistor
Product data sheet Supersedes data of 2002 Aug 08
2004 Jan 09
NXP Semiconductors
50 V; 3 A
NPN low VCEsat (BISS)
transistor
Product data sheet
PBSS4350T
FEATURES
Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
High collector current capability High collector current gain Improved efficiency due to reduced heat generation.
APPLICATIONS
Power management applications Low and medium power DC/DC convertors Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low VCEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
MARKING
TYPE NUMBER PBSS4350T
MARKING CODE(1) ZC*
Note
1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICRP
collector-emitter voltage collector current (DC) repe...
