PHM12NQ20T

www.DataSheet4U.com PHM12NQ20T TrenchMOS™ standard level FET Rev. 01 — 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHM12NQ20T in SOT685-1 (QLPAK). 1.2 Features s SOT96 (SO-8) footprint compatible s Surface mount package s Low thermal resistance s Low profile. 1.3 Applications s DC-DC converter primary side switch s Portable equipment applications. 1.4 Quick reference data s VDS ≤ 200 V s Ptot ≤ 62.5 W s ID ≤ 14.4 A s RDSon ≤ 130 mΩ. 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685 (QLPAK), simplified outlines and symbol Description source (s) gate (g) drain (d) mounting base, connected to drain (d) 1 4 d Simplified outline Symbol mb g s 8 Bottom view 5 MBL585 MBB076 SOT685-1 (QLPAK) [1] Shaded area indicates pin 1 identifier Philips Semiconductors PHM12NQ20T TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS ...