FQB25N33

www.DataSheet4U.com FQB25N33 330V N-Channel MOSFET QFET FQB25N33 330V N-Channel MOSFET Features 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V Low gate charge (typical 58nC) Low Crss (typical 40pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant LE REE I DF September 2006 ® General Description These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Qualified to AEC Q101 A Absolute Maximum Ratings Symbol VDSS Drain-Source Voltage ID IDM VGSS EAS IAR EAR dv/dt PD Drain Current Drain Current Parameter FQB25N33 330 25 16.0 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 100 ±30 370 25 37 4.5 3.1 250 2.0 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/oC o o - Continuous (TC = 25oC) - Continuous (TC = 100oC) M ENTATIO LE N MP - Pulsed Gate -Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalance Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25oC) * Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature TL Maximum lea...