2SJ681 Converter Datasheet

2SJ681 Datasheet PDF, Equivalent


Part Number

2SJ681

Description

Relay Driver DC-DC Converter

Manufacture

Toshiba

Total Page 6 Pages
PDF Download
Download 2SJ681 Datasheet PDF


2SJ681
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (UMOSIII)
2SJ681
2SJ681
Relay Drive, DCDC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drainsource ON resistance: RDS (ON) = 0.12 (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
z Enhancement mode: Vth = 0.8 to 2.0 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
5
20
20
40.5
5
2
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
6.5±0.2
5.2±0.2
Unit: mm
0.6 MAX.
0.9
2.3 2.3
1.1±0.2
0.6 MAX
123
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
6.25
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-06-30

2SJ681
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turnon time
Switching time
Fall time
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = 20 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS0 V
10 V
ID = 2.5 A
Output
RL =
12
VDD ∼− 30 V
Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ≈ −48 V, VGS = 10 V, ID = 5 A
Qgd
2SJ681
Min
60
35
0.8
2.5
Typ.
0.16
0.12
5.0
700
60
90
Max
±10
100
2.0
0.25
0.17
Unit
µA
µA
V
V
V
S
pF
— 14 —
— 24 —
ns
— 14 —
— 95 —
— 15 —
— 11 — nC
—4—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / µS
Min Typ. Max Unit
— — 5 A
— — 20 A
— — 1.7 V
— 40 — ns
— 32 — nC
Marking
J681
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-06-30


Features www.DataSheet4U.com 2SJ681 TOSHIBA Fiel d Effect Transistor Silicon P Channel M OS Type (U−MOSIII) 2SJ681 Relay Driv e, DC−DC Converter and Motor Drive Ap plications 6.5±0.2 5. ±0.2 1.5±0.2 Uni t: mm 0.6 MAX. z High forward transfer admittance: |Yfs| = 5.0 S (typ .) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancemen t mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 1.6 z L ow drain−source ON resistance: RDS (O N) = 0.12 Ω (typ.) 0.9 5. ±0.2 z 4-V gate drive 1. 1±0.2 4.1±0.2 .7 0.6 MAX 2.3 2 .3 2.3±0.2 0.6± 0.15 0.6±0.15 2 3 Maximum Ratings (Ta = 25 C) Characteristics Drain−source volt age Drain−gate voltage (RGS = 20 kΩ ) Gate−source voltage Drain current D rain power dissipation Single pulse ava lanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 40.5 −5 2 150 −55~150 Unit V V V A A W mJ A mJ.
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