TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and M...
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
(VGS = −10 V) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
1.5 ± 0.2
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
1.6 5.5 ± 0.2
0.9
1.1 ± 0.2
0.6 MAX.
4.1 ± 0.2 5.7
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
−60
V
−60
V
±20
V
−5
A
−20
A
20
W
40.5
mJ
−5
A
2
mJ
150
°C
−55 to 150
°C
2.3 2.3
2.3 ± 0.2
123
0.8 MAX. 1.1 MAX.
0.6 ± 0.15 0.6 ± 0.15
1. GATE 2. DRAIN
(HEAT SINK) 3. SOURCE
2 1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,...