Advanced Power MOSFET
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Semiconductor
STK1625F
Advanced Power MOSFET
DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING A...
Description
www.DataSheet4U.com
Semiconductor
STK1625F
Advanced Power MOSFET
DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features
High Voltage: BVDSS=250V(Min.) Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=29nC(Typ.) Low RDS(on) :RDS(on)=0.27Ω(Max.)
Type NO. STK1625F Marking STK1625 Package Code TO-220F-3L
Ordering Information
Outline Dimensions
unit : mm
9.80~10.20
Φ3.05~3.35 2.60~3.00
15.40~15.80
12.20~12.60
9.10~9.30
1.07 Min. 0.90 Max. 0.60 Max.
2.54 Typ.
2.54 Typ.
1
2
3
0.60 Max.
3.46 Typ.
4.70 Max.
2.70 Max.
PIN Connections 1. Gate 2. Drain 3. Source
KSD-T0O010-000
1
STK1625F
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
*
(Tc=25°C)
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
250 ±30 16 7.5 64 30 16 300 16 13.9 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-a)
Typ.
-
Max
4.16 62.5
Unit
℃/W
KSD-T0O010-000
2
STK1625F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward ...
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