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STTH2R06

ST Microelectronics

HIGH EFFICIENCY ULTRAFAST DIODE

www.DataSheet4U.com ® STTH2R06 HIGH EFFICIENCY ULTRAFAST DIODE Table 1: Main Product Characteristics IF(AV) VRRM Tj V...


ST Microelectronics

STTH2R06

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www.DataSheet4U.com ® STTH2R06 HIGH EFFICIENCY ULTRAFAST DIODE Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (typ) FEATURES AND BENEFITS ■ ■ ■ ■ 2A 600 V 175°C 1V 35 ns DO-41 STTH2R06 A K Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature SMA STTH2R06A DESCRIPTION The STTH2R06 is using ST Turbo 2 600V planar Pt doping technology. It is specially suited for switching mode base drive & transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. SMB STTH2R06U Table 2: Order Codes Part Number STTH2R06 STTH2R06RL STTH2R06A STTH2R06U STTH2R06S Marking STTH2R06 STTH2R06 R6A R6U R62 SMC STTH2R06S Table 3: Absolute Ratings (limiting values) Symbol VRRM IF(RMS) RMS forward voltage DO-41 IF(AV) Average forward current δ = 0.5 SMA SMB SMC IFSM Tstg Tj June 2005 Parameter Repetitive peak reverse voltage TL = 70°C TL = 85°C TL = 100°C TL = 115°C tp = 10ms sinusoidal Value 600 7 Unit V A 2 A Surge non repetitive forward current Storage temperature range Operating junction temperature range DO-41 SMA / SMB / SMC 40 30 -65 to + 175 -40 to + 175 A °C °C 1/9 REV. 2 STTH2R06 Table 4: Thermal Resistance Symbol Parameter DO-41 Rth(j-l) Junction to lead SMA SMB SMC L = 5 mm Value (max). 35 30 25 20 °C/W Unit Table 5: Static Electrical Characteristics Symbol IR * Parameter Reverse leakage curre...




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