TPCA8003-H

www.DataSheet4U.com TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8003-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 0.4±0.1 5 Unit: mm 0.05 M A 5.0±0.2 Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc=25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 35 105 45 2.8 Unit V V V A W W 4.25±0.2 8 5 1,2,3：SOURCE 5,6,7,8：DRAIN 0.8±0.1 JEDEC JEITA TOSHIBA ― ― 2-6J1B Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.080 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) Circuit Configuration 1.6 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 159 35 4.5 150 −55 to 150 mJ A mJ °C °C 8 7 6 3.5±0.2 4：GATE 5 1 2 3 4 Note...