TPCA8007-H

www.DataSheet4U.com TENTATIVE TPCA8007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVII) TPCA8007-H 0.5±0.1 Switching Regulator Applications Motor Drive Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A High speed switching Low drain-source ON resistance : R DS (ON) = 30 mO (typ.) (VG =10V, ID=10A) High forward transfer admittance: |Yfs| = 19 S (typ.) Low leakage current: IDSS = 100 µA (max) (V DS = 100 V) Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA) 5.0±0.2 Small footprint due to small and thin package 0.15±0.05 1 0.95±0.05 4 0.595 0.166±0.05 A 5.0±0.2 S 1 0.6±0.1 4 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD PD Rating 100 100 ±20 20 40 45 2.8 W W Unit V V V A 4.25±0.2 8 1,2,3F SOURCE 5,6,7,8F DRAIN 5 0.8±0.1 4F GATE JEDEC JEITA TOSHIBA ? ? 2-5Q1A Pulsed (Note 1) Drain power dissipation Drain power dissipation (Tc=25Ž ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) PD 1.6 W Circuit Configuration 8 7 6 5 EA S IAR EAR Tch Tstg 351 20 4.5 150 −55 to 150 mJ A mJ °C °C 1 2 3 3.5±0.2 1.1±0.2 0.05 S 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), plea...