TPCA8102

www.DataSheet4U.com TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8102 0.5±0.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A 5.0±0.2 S 1 4 4.25±0.2 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) VDSS VDGR VGSS ID IDP PD PD PD EAS IAR −30 −30 ±20 − 40 −120 45 2.8 V V V A W W 8 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN 5 0.8±0.1 Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ― ― 2-5Q1A Drain power dissipation Drain power dissipation Drain power dissipation Weight: 0.076 g (typ.) 1.6 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 208 − 40 4.5 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 EAR Tch Tstg Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 3.5±0.2 Characteristics Symbol Rating ...