ZXMN3B04N8

www.DataSheet4U.com ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package SO8 APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMN3B04N8TA ZXMN3B04N8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units Top View DEVICE MARKING ZXMN 3B04 ISSUE 2 - MAY 2004 1 SEMICONDUCTORS ZXMN3B04N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) Pulsed drain current Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range T j :T stg (c) SYMBOL V DSS V GS ID LIMIT 30 Ϯ12 8.9 7.3 7.2 UNIT V V A A A A A A W mW/°C W mW/°C °C I DM IS I SM PD PD 45 4.5 45 2 16 3 24 -55 to +150 THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R ⍜ JA R ⍜ JA...