ZXMN3B14F

www.DataSheet4U.com ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package PACKAGE APPLICATIONS DC-DC converters Power management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMN3B14FTA ZXMN3B14FTC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3,000 units 10,000 units PINOUT DEVICE MARKING 3B14 ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXMN3B14F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V GS = 4.5V; T A =25°C (b) @ V GS = 4.5V; T A =70°C (b) @ V GS = 4.5V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C Linear Derating Factor Operating and Storage Temperature Range T j , T stg (b) SYMBOL V DSS V GS ID LIMIT 30 Ϯ12 3.5 2.9 2.9 16 2.4 16 1 8 1.5 12 -55 to +150 UNIT V V A A A A A A W mW/°C W mW/°C °C I DM IS I SM PD PD THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R ⍜ JA R ⍜ JA VALUE 125 83...