ZXTN19055DZ

www.DataSheet4U.com ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC(cont) = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m⍀ PD = 2.1W Description Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. C B Feature Extremely low equivalent on-resistance of 28m⍀ 6 Amps continuous current Up to 10 amps peak current Very low saturation voltages Excellent hFE characteristics up to 10 amps 150V Forward blocking voltage E E C C B Pinout - top view Applications Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC modules Backlight inverters Ordering information Device ZXTN19055DZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Device marking S75 Issue 1 - June 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN19055DZ Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking voltage) Collector-emitter voltage (base open) Emitter-base voltage Continuous collector current(b) Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C Linear derating factor Operating and storage temperature range Tj, Tstg (b) Symbol VCBO VCEX VCEO VEBO IC ICM PD Limit 150 150 55 7 6 10 1.5 12 Unit V V V V A A W mW/°C W mW/°C °C PD...