ZXTN25012EFH

ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features High power dissipation SOT23 package High peak current Very high gain Low saturation voltage 6V reverse blocking voltage Applications MOSFET gate drivers Power switches Motor control DC fans DC-DC converters Ordering information C B E E C B Pinout - top view Device ZXTN25012EFHTA Device marking 1C3 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Issue 3 - March 2008 1 © Zetex Semiconductors plc 2008 www.zetex.com ZXTN25012EFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(c) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEO VECX VEBO IC IB ICM PD Limit 20 12 6 7 6 1 15 0.73 5.84 Unit V V V V A A A W mW/°C ...