MRF6S9160HSR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.9 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 76 Watts Avg., Full Frequency Band (865 - 895 MHz) Power Gain — 20 dB Drain Efficiency — 45% Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 2% rms GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 160 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 58% Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 4...