DatasheetsPDF.com

RSL020P03 Dataheets PDF



Part Number RSL020P03
Manufacturers Rohm
Logo Rohm
Description P-Channel MOSFET
Datasheet RSL020P03 DatasheetRSL020P03 Datasheet (PDF)

www.DataSheet4U.com RSL020P03 Transistors 4V Drive Pch MOS FET RSL020P03 zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) TUMT6 2.0 1.3 0.85Max. zFeatures 1) Low On-resistance. 2) High speed switching. 1pin mark (6) (5) (4) 0.2 0.65 0.65 0.77 1.7 0.2 (1) (2) (3) 2.1 0~0.1 0.17 0.3 zApplications Switching zPackaging specifications Package Type RSL020P03 Code Basic ordering unit (pieces) Taping TR 3000 Abbreviated symbol : SL zInner circuit (6) (5) (4) ∗2.

  RSL020P03   RSL020P03


Document
www.DataSheet4U.com RSL020P03 Transistors 4V Drive Pch MOS FET RSL020P03 zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) TUMT6 2.0 1.3 0.85Max. zFeatures 1) Low On-resistance. 2) High speed switching. 1pin mark (6) (5) (4) 0.2 0.65 0.65 0.77 1.7 0.2 (1) (2) (3) 2.1 0~0.1 0.17 0.3 zApplications Switching zPackaging specifications Package Type RSL020P03 Code Basic ordering unit (pieces) Taping TR 3000 Abbreviated symbol : SL zInner circuit (6) (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±2 ±8 −0.8 −8 1 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 125 Unit °C/W 0.15Max. 1/2 RSL020P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − VGS (th) −1.0 Gate threshold voltage − Static drain-source on-state RDS (on)∗ − resistance − Yfs ∗ 1.4 Forward transfer admittance Ciss − Input capacitance Coss Output capacitance − Reverse transfer capacitance Crss − Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg Gate-source charge − Qgs Gate-drain charge Qgd − ∗Pulsed Typ. − − − − 80 125 140 − 350 80 50 11 11 35 11 3.9 1.3 1.1 Max. ±10 − −1 −2.5 120 190 210 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −2A, VGS= −10V ID=−1A, VGS= −4.5V ID= −1A, VGS= −4.0V VDS= −10V, ID= −1A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −1A VGS= −10V RL=15Ω RG =10Ω VDD −15V VGS= −5V ID= −2A RL=7.5Ω RG =10Ω zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS= −0.8A, VGS=0V 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 .


RPM5500 RSL020P03 SFD035VX2-VGA


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)