SI1499DH

www.DataSheet4U.com Si1499DH New Product Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.078 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V -8 0.115 at VGS = - 1.8 V 0.153 at VGS = - 1.5 V 0.424 at VGS = - 1.2 V ID (A)c - 1.6 - 1.6 - 1.6 - 1.6 - 1.6b 10.5 nC Qg (Typ) FEATURES TrenchFET® Power MOSFET Ultra-Low On-Resistance RoHS Compliant RoHS COMPLIANT APPLICATIONS Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.2 V Critical for Optimized Design and Longer Battery Life S SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code BI D 2 5 D Part # Code XX YY Lot Traceability and Date Code G G 3 Top View 4 S D P-Channel MOSFET Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit -8 ±5 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c - 6.5c - 1.6c - 1.3a, b 2.78 1.78 2.5a, b 1a, b - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, d Symbol t ≤ 5 sec Steady State RthJA RthJF ...