SI3422DV

www.DataSheet4U.com Si3422DV New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 5 @ VGS = 10 V ID (A) "0.42 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 secs 200 "20 "0.42 "0.34 Steady State Unit V "0.31 "0.25 "0.75 "0.75 0.028 "1 mJ A 1.14 0.73 –55 to 150 _C W A 2.1 1.34 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71098 S-99344—Rev. A, 22-Nov-98 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 35 Maximum 60 110 42 Unit _C/W 2-1 Si3422DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS IDSS ID(on) rDS(on) gfs VSD...