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IRFS3307 Dataheets PDF



Part Number IRFS3307
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFS3307 DatasheetIRFS3307 Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.3m: 130A GDS TO-220AB IRFB3307 GDS D2Pak IRFS3307 GD.

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.3m: 130A GDS TO-220AB IRFB3307 GDS D2Pak IRFS3307 GDS TO-262 IRFSL3307 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V dContinuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics eEAS (Thermally limited) Single Pulse Avalanche Energy ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak www.irf.com Max. ™130 91™ 510 250 1.6 ± 20 11 -55 to + 175 300 x x10lb in (1.1N m) 270 See Fig. 14, 15, 16a, 16b Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 01/20/06 IRFB3307/IRFS3307/IRFSL3307 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Gate Input Resistance 75 ––– ––– ––– 0.069 ––– ––– 5.0 6.3 V VGS = 0V, ID = 250µA dV/°C Reference to 25°C, ID = 1mA gmΩ VGS = 10V, ID = 75A 2.0 ––– 4.0 V VDS = VGS, ID = 150µA ––– ––– 20 µA VDS = 75V, VGS = 0V ––– ––– 250 VDS = 75V, VGS = 0V, TJ = 125°C ––– ––– 200 nA VGS = 20V ––– ––– -200 VGS = -20V ––– 1.5 ––– Ω f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) hEffective Output Capacitance (Time Related) 98 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 120 35 46 26 120 51 63 5150 460 250 570 700 ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S VDS = 50V, ID = 75A nC ID = 75A gVDS = 60V VGS = 10V ns VDD = 48V ID = 75A gRG = 3.9Ω VGS = 10V pF VGS = 0V VDS = 50V ƒ = 1.0MHz iVGS = 0V, VDS = 0V to 60V , See Fig.11 hVGS = 0V, VDS = 0V to 60V , See Fig. 5 Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ãd(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ton Forward Turn-On Time Min. Typ. Max. Units Conditions ™––– ––– 130 A MOSFET symbol D ––– ––– 510 showing the A integral reverse G ––– ––– 1.3 p-n junction diode. gV TJ = 25°C, IS = 75A, VGS = 0V S ––– 38 57 ns TJ = 25°C VR = 64V, ––– 46 69 TJ = 125°C ––– 65 98 nC TJ = 25°C gIF = 75A di/dt = 100A/µs ––– 86 130 TJ = 125°C ––– 2.8 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. Package limitation current is 75A. ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.096mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 75A, di/dt ≤ 530A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. as Coss while VDS is rising from 0 to 80% VDSS. ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ approximately 90°C. 2 www.irf.com ID, Drain-to-Source Current (A) 1000 100 10 TOP BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 1 0.1 0.01 0.1 4.5V ≤60µs PULSE WIDTH Tj = 25°C 1 10 100 VDS, Drain-to-Source Voltage (V) 1000 Fig 1. Typical Output Characteristics 1000 ID, Drain-to-Source Current (Α) 100 TJ = 175°C 10 TJ = 25°C 1 0.1.


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