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2.0x1.25mm INFRA-RED EMITTING DIODE
AP2012F3C
Features
2.0mmx1.25mm SMT LED,1.1mm THICKNESS. MECH...
www.DataSheet4U.com
2.0x1.25mm INFRA-RED EMITTING DIODE
AP2012F3C
Features
2.0mmx1.25mm SMT LED,1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTO
TRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL. RoHS COMPLIANT.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0 .1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice.
SPEC NO: DSAD1357 APPROVED: J. Lu
REV NO: V.3 CHECKED: Allen Liu
DATE: MAR/18/2005 DRAWN: Y.W.WANG
PAGE: 1 OF 4 ERP:1203000103
Selection Guide
Part No. Dice Lens Type Po (mW/sr) @ 20mA Min. AP2012F3C GaAs WATER CLEAR 0.4 Typ. 1.2 Viewing Angle 2θ1/2 120°
Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
Electrical / Optical Characteristics at TA=25°C
Item Forward Voltage Reverse Current Capacitance Peak Spectral Wavelength Spectral Bandwidth F3 F3 F3 F3 F3 P/N Symbol VF IR C λP ∆λ1/2 Typ. 1.2 90 940 50 Max. 1.6 10 Units V uA pF nm nm Test Conditions IF=20mA VR=5V VF=0V;f=1MHz IF=20mA IF=20mA
Absolute Maximum Ratings at TA=25°C
Parameter Power Dissipation DC Forward Current Peak Forward Current[1] Reverse Voltage Operating Temperature Storage Temperature
Note: 1. 1/100 Duty Cycle, 10µs Pulse Width.
Symbol PT IF iFS VR TA TSTG
F3 100 50 1.2 5 -40 To +85 -40 To +85
Units mW mA A V °C °C
SPEC NO: DSAD1357 APPROVED: J. Lu
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