MHL19338N AMplifier Datasheet

MHL19338N Datasheet PDF, Equivalent


Part Number

MHL19338N

Description

PCS Band RF Linear LDMOS AMplifier

Manufacture

Motorola Semiconductor

Total Page 3 Pages
Datasheet
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MHL19338N
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Freescale Semiconductor
Technical Data
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
Third Order Intercept: 46 dBm Typ
Power Gain: 30 dB Typ (@ f = 1960 MHz)
Input VSWR v 1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
N Suffix Indicates Lead - Free Terminations
Document Number: MHL19338N
Rev. 6, 8/2006
MHL19338N
1900 - 2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
VDD
Pin
Tstg
TC
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 1960 MHz)
(f = 1900 - 2000 MHz)
(f = 1950 MHz)
IDD
Gp
GF
P1dB
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
ITO
Noise Figure
(f = 2000 MHz)
NF
Value
30
+10
- 40 to +100
- 20 to +100
Min Typ Max
— 500 525
29 30 32
— 0.1 0.4
35 36 —
45 46 —
— 4.2 4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL19338N
1

MHL19338N
www.DataSheet4U.com
PACKAGE DIMENSIONS
0.020 (0.51) M T A M
A
G
B
A 2X
S
Q
0.008 (0.20) M T S M A M
R
J
K
4X D
0.020 (0.51) M T B M
1
2
34
L
H
N
4X P
0.020 (0.51) M T
S
W
F
E
C
T
SEATING
PLANE
CASE 301AP - 02
ISSUE E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
INCHES
DIM MIN MAX
A 1.760 1.780
B 1.370 1.390
C 0.245 0.265
D 0.017 0.023
E 0.080 0.100
F 0.086 BSC
G 1.650 BSC
H 1.290 BSC
J 0.266 0.280
K 0.125 0.165
L 0.990 BSC
N 0.390 BSC
P 0.008 0.013
Q 0.118 0.132
R 0.535 0.555
S 0.445 0.465
W 0.090 BSC
MILLIMETERS
MIN MAX
44.70 45.21
34.80 35.31
6.22 6.73
0.43 0.58
2.03 2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76 7.11
3.18 4.19
25.15 BSC
9.91 BSC
0.20 0.33
3.00 3.35
13.59 14.10
11.30 11.81
2.29 BSC
STYLE 1:
PIN 1. RF INPUT
2. VDD1
3. VDD2
4. RF OUTPUT
CASE: GROUND
MHL19338N
2
RF Device Data
Freescale Semiconductor


Features www.DataSheet4U.com Freescale Semicondu ctor Technical Data Document Number: M HL19338N Rev. 6, 8/2006 PCS Band RF Li near LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 o hm systems operating in the PCS frequen cy band. A silicon FET Class A design p rovides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics ar e ideal for digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 46 dBm Typ • Power Gain: 30 dB Typ (@ f = 1960 MHz) • Input VS WR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characterist ics • Ideal for Feedforward Base Stat ion Applications • N Suffix Indicates Lead - Free Terminations MHL19338N 1 900 - 2000 MHz 4.0 W, 30 dB RF LINEAR L DMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (T C = 25°C unless otherwise noted) Ratin g DC Supply Voltage RF Input Power Stor age Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg T.
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