MHL19338N

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. Third Order Intercept: 46 dBm Typ Power Gain: 30 dB Typ (@ f = 1960 MHz) Input VSWR v 1.5:1 Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications N Suffix Indicates Lead - Free Terminations MHL19338N 1900 - 2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 - 40 to +100 - 20 to +100 Unit Vdc dBm °C °C Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression (f = 1960 MHz) (f = 1900 - 2000 MHz) (f = 1950 MHz) Symbol IDD Gp GF P1dB ITO NF Min — 29 — 35 45 — Typ 500 30 0.1 36 46 4.2 Max 525 32 0.4 — — 4.5 Unit mA dB dB dBm dBm dB Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) Noise Figure (f = 2000 MHz) NOTE - CAUTION - MOS ...