IRHY53034CM

www.DataSheet4U.com PD - 93825D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω IRHY53034CM 300K Rads (Si) IRHY54034CM 500K Rads (Si) IRHF58034CM 1000K Rads (Si) 0.04Ω 0.04Ω 0.048Ω IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ ID QPL Part Number 18A* JANSR2N7483T3 18A* JANSF2N7483T3 18A* JANSG2N7483T3 18A* JANSH2N7483T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-257AA Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Sourc...