30A01S

www.DataSheet4U.com Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2106A [30A01S] 0.3 0.75 0.6 Low-frequency power amplifier, muting circuit. Features Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.8 0.4 1.6 3 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20!30!1.6mm). Conditions SANYO : SMCP Ratings --30 --30 --5 --300 --600 200 150 --55 to +150 0.1max Unit V V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--100mA, IB=--5mA IC=--100mA, IB=--5mA Ratings min typ max --0.1 --0.1 20...