30A01S Applications Datasheet

30A01S Datasheet PDF, Equivalent


Part Number

30A01S

Description

Low-Frequency General-Purpose Amplifier Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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30A01S
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Ordering number : ENN7511
30A01S
PNP Epitaxial Planar Silicon Transistor
30A01S
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
Low-frequency power amplifier, muting circuit.
unit : mm
2106A
Features
Large current capacity.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=0.67[IC=0.3A, IB=15mA].
Ultrasmall package facilitates miniaturization in end
[30A01S]
0.75
0.3 0.6
3
products.
Small ON-resistance (Ron).
12
0.5 0.5
1.6
0.2
0.1
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : SMCP
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a glass epoxy board (20!30!1.6mm).
Ratings
--30
--30
--5
--300
--600
200
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Marking : XQ
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--10mA
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
IC=--100mA, IB=--5mA
IC=--100mA, IB=--5mA
min
200
Ratings
typ
max
Unit
--0.1 µA
--0.1 µA
500
520 MHz
3 pF
--110
--220 mV
--0.9 --1.2 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3003 TS IM TA-100646 No.7511-1/4

30A01S
30A01S
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--10µA, IE=0
IC=--1mA, RBE=
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
50+
220µF
VBE=5V
IC=20IB1= --20IB2= --100mA
OUTPUT
RL
+
470µF
VCC= --12V
min
--30
--30
--5
Ratings
typ
39
200
48
max
Unit
V
V
V
ns
ns
ns
IC -- VCE
--200
--180 --1.6mA
--160
--140
--1.8mA
--1.4mA
--1.2mA --1.0mA
--0.8mA
--0.6mA
--120
--100
--0.4mA
--80
--60 --0.2mA
--40
--20
0
0
1000
7
5
3
2
IB=0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT04096
hFE -- IC
VCE= --2V
Ta=75°C
25°C
--25°C
100
7
5
3
2
10
--1.0
23
5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT04098
--400
VCE= --2V
IC -- VBE
--300
--200
--100
0
0
--0.2
--0.4
--0.6
--0.8
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
--1000
IC / IB=20
7
5
--1.0
IT04097
3
2
--100
7
5
3
2
Ta=75°C
--25°C 25°C
--10
--1.0
23
5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT04099
No.7511-2/4


Features www.DataSheet4U.com Ordering number : EN N7511 30A01S PNP Epitaxial Planar Sili con Transistor 30A01S Low-Frequency Ge neral-Purpose Amplifier Applications Ap plications • Package Dimensions unit : mm 2106A [30A01S] 0.3 0.75 0.6 Low- frequency power amplifier, muting circu it. Features • • • • Large current capacity. Low collector-to-emit ter saturation voltage (resistance). RC E(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. U ltrasmall package facilitates miniaturi zation in end products. Small ON-resist ance (Ron). 0.4 0.8 0.4 1.6 3 0 to 0 .1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Bas e 2 : Emitter 3 : Collector Specificat ions Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to -Base Voltage Collector Current Collect or Current (Pulse) Collector Dissipatio n Junction Temperature Storage Temperat ure Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20 !30!1.6mm). Conditions SANYO : SMCP Ratings --30 --30 --5 --300 --600 200 .
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