30A01SP Applications Datasheet

30A01SP Datasheet PDF, Equivalent


Part Number

30A01SP

Description

Low-Frequency General-Purpose Amplifier Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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Download 30A01SP Datasheet PDF


30A01SP
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Ordering number : ENN7512
30A01SP
PNP Epitaxial Planar Silicon Transistor
30A01SP
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
Low-frequency power amplifier, muting circuit.
unit : mm
2033A
Features
Large current capacity.
[30A01SP]
4.0
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=0.67[IC=0.3A, IB=15mA].
Small ON-resistance (Ron).
0.4
0.5
2.2
0.4
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : XQ
Symbol
ICBO
IEBO
hFE
Conditions
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--10mA
123
1.3 1.3
3.0
3.8nom
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
--30
--30
--5
--300
--600
400
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
min
200
Ratings
typ
max
Unit
--0.1 µA
--0.1 µA
500
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3003 TS IM TA-100647 No.7512-1/4

30A01SP
30A01SP
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
IC=--100mA, IB=--5mA
IC=--100mA, IB=--5mA
IC=--10µA, IE=0
IC=--1mA, RBE=
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
50+
220µF
VBE=5V
IC=20IB1= --20IB2= --100mA
OUTPUT
RL
+
470µF
VCC= --12V
min
--30
--30
--5
Ratings
typ
520
3
--110
--0.9
39
200
48
max
--220
--1.2
Unit
MHz
pF
mV
V
V
V
V
ns
ns
ns
IC -- VCE
--200
--180 --1.6mA
--160
--140
--1.8mA
--1.4mA
--1.2mA --1.0mA
--0.8mA
--0.6mA
--120
--100
--0.4mA
--80
--60 --0.2mA
--40
--20
0
0
1000
7
5
3
2
IB=0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT04096
hFE -- IC
VCE= --2V
Ta=75°C
25°C
--25°C
100
7
5
3
2
10
--1.0
23
5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT04098
--400
VCE= --2V
IC -- VBE
--300
--200
--100
0
0
--0.2
--0.4
--0.6
--0.8
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
--1000
IC / IB=20
7
5
--1.0
IT04097
3
2
--100
7
5
3
2
Ta=75°C
--25°C 25°C
--10
--1.0
23
5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT04099
No.7512-2/4


Features www.DataSheet4U.com Ordering number : EN N7512 30A01SP PNP Epitaxial Planar Sil icon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions un it : mm 2033A [30A01SP] 4.0 3.0 2.2 Lo w-frequency power amplifier, muting cir cuit. Features • • • 0.6 0.4 1 5.0 1.8 Large current capacity. Low c ollector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0 .3A, IB=15mA]. Small ON-resistance (Ron ). 0.4 0.5 0.4 1 2 1.3 0.7 3 1.3 S pecifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E mitter-to-Base Voltage Collector Curren t Collector Current (Pulse) Collector D issipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratin gs --30 --30 --5 --300 --600 400 150 -- 55 to +150 Unit V V V mA mA mW °C °C 3.0 3.8nom Electrical Characteristics at Ta=25°C Parameter Collector Cutof.
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