30A02SS Applications Datasheet

30A02SS Datasheet PDF, Equivalent


Part Number

30A02SS

Description

Low-Frequency General-Purpose Amplifier Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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Download 30A02SS Datasheet PDF


30A02SS
www.DataSheet4U.com
Ordering number : ENN7362
30A02SS
PNP Epitaxial Planar Silicon Transistor
30A02SS
Low-Frequency
General-Purpose Amplifier Applications
Applications
Low-frequency Amplifier, high-speed switching,
small motor drive.
Package Dimensions
unit : mm
2159A
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=580m[IC=0.7A, IB=35mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
Top View
1.4
0.25
3
12
0.45
0.2
Side View
[30A02SS]
Side View
0.1
Bottom View
3
1 : Base
2 : Emitter
3 : Collector
Specifications
Absolute Maximum Ratings at Ta=25°C
21
SANYO : SSFP
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a glass epoxy board (20!30!1.6mm)
Ratings
--30
--30
--5
--600
--1.2
200
150
--55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Marking : XM
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--10mA
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
IC=--200mA, IB=--10mA
IC=--200mA, IB=--10mA
min
200
Ratings
typ
max
Unit
--100 nA
--100 nA
500
520 MHz
4.7 pF
--110
--220 mV
--0.9 --1.2 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3003 TS IM TA-100698 No.7362-1/4

30A02SS
30A02SS
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--10µA, IE=0
IC=--1mA, RBE=
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50+
220µF
VBE=5V
IC=20IB1= --20IB2= --300mA
OUTPUT
RL
+
470µF
VCC= --12V
min
--30
--30
--5
Ratings
typ
35
125
25
max
Unit
V
V
V
ns
ns
ns
IC -- VCE
--700
--600
--30mA--25mA --20mA--15mA
--10mA
--500 --7mA
--5mA
--400 --3mA
--2mA
--300
--1mA
--200
--500µA
--100
0
0
1000
7
5
3
IB=0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV IT05049
hFE -- IC
VCE= --2V
Ta=75°C
25°C
--25°C
2
100
7
5
3
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT05051
--800
--700
--600
--500
--400
--300
--200
--100
0
0
--1000
7
5
3
2
IC -- VBE
VCE= --2V
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
IT05050
IC / IB=20
--100
7
5
3
2
Ta=75°-C-25°C
25°C
--10
--1.0
23
5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT05054
No.7362-2/4


Features www.DataSheet4U.com Ordering number : E NN7362 30A02SS PNP Epitaxial Planar Si licon Transistor 30A02SS Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions u nit : mm 2159A [30A02SS] Top View 1.4 0 .3 Low-frequency Amplifier, high-speed switching, small motor drive. Feature s • • Side View 0.1 • • Lar ge current capacitance. Low collector-t o-emitter saturation voltage (resistanc e). RCE(sat) typ=580mΩ[IC=0.7A, IB=35 mA]. Ultrasmall package facilitates min iaturization in end products. Small ON- resistance (Ron). 0.25 3 0.8 0.3 1.4 1 0.45 0.2 2 Bottom View 0.07 Side V iew 0.6 3 1 : Base 2 : Emitter 3 : Co llector SANYO : SSFP Specifications Ab solute Maximum Ratings at Ta=25°C Para meter Collector-to-Base Voltage Collect or-to-Emitter Voltage Emitter-to-Base V oltage Collector Current Collector Curr ent (Pulse) Collector Dissipation Junct ion Temperature Storage Temperature Sym bol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20!30!1.
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